Title :
Semiconductor device reliability in extreme high temperature space environments
Author :
Anderson, Wallace T.
Author_Institution :
Naval Res. Lab., Washington, DC, USA
Abstract :
Reliability at high temperatures is one of the most important problems for electronic components operating in extreme space environments. High temperature operation not only reduces the performance of electronic devices, but also greatly shortens their lifetime. The electronic devices are usually designed for room temperature performance. In this paper a review is made of high temperature reliability testing of solid-state electronic components. To date, most of this work has been concerned with high temperature stressing, usually for short periods of time (less than 100 hours) to demonstrate stability. Comprehensive high temperature reliability studies will be required to field high temperature devices for future space exploration
Keywords :
HEMT integrated circuits; environmental stress screening; failure analysis; field effect MMIC; high-temperature electronics; integrated circuit reliability; integrated circuit testing; life testing; power semiconductor devices; reviews; semiconductor device reliability; semiconductor device testing; space vehicle electronics; PHEMT MMIC; electronic components; extreme high temperature space environment; failure analysis; high temperature reliability testing; high temperature stressing; life testing; power semiconductor device; semiconductor device reliability; Electronic components; FETs; Failure analysis; Gallium arsenide; HEMTs; Life testing; PHEMTs; Semiconductor device reliability; Semiconductor devices; Temperature;
Conference_Titel :
Aerospace Conference, 2001, IEEE Proceedings.
Conference_Location :
Big Sky, MT
Print_ISBN :
0-7803-6599-2
DOI :
10.1109/AERO.2001.931206