• DocumentCode
    3203971
  • Title

    A PV module with an active area utilization of 99.8%

  • Author

    Glatfelter, T. ; Lycette, M. ; Akkashian, E. ; Hoffman, K.

  • Author_Institution
    United Solar Syst. Corp., Troy, MI, USA
  • fYear
    1996
  • fDate
    13-17 May 1996
  • Firstpage
    1173
  • Lastpage
    1176
  • Abstract
    We have developed a laser-interconnected high-efficiency a-Si alloy module with an active area utilization of 99.8%. This structure uses very small through-hole contact points to collect current from the TCO to the more conductive stainless steel substrate, resulting in a large-area parallel-connected module with very little shadow loss. In addition to a dramatic increase in the area utilization we have also demonstrated great potential for improving the manufacturing process and reducing the cost of our modules. The improvement in the manufacturing process of these modules is a result of the high degree of automation that can be obtained using this laser process. The improved surface feature height of this module over the conventional finger designs will allow us to significantly reduce the thickness of the encapsulation materials. We will present details on an 11.5% multi-junction device using this advanced process
  • Keywords
    Ge-Si alloys; amorphous semiconductors; elemental semiconductors; semiconductor device packaging; solar cell arrays; solar cells; stainless steel; substrates; 11.5 percent; PV module; SiGe; active area utilization; conductive stainless steel substrate; cost reduction; current collection; encapsulation materials; high-efficiency; laser-interconnected a-Si alloy module; manufacturing process; multi-junction solar cell; parallel-connected module; surface feature height; through-hole contact points; Costs; Electrodes; Encapsulation; Insulation; Manufacturing processes; Optical design; Optical materials; Steel; Substrates; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference, 1996., Conference Record of the Twenty Fifth IEEE
  • Conference_Location
    Washington, DC
  • ISSN
    0160-8371
  • Print_ISBN
    0-7803-3166-4
  • Type

    conf

  • DOI
    10.1109/PVSC.1996.564341
  • Filename
    564341