DocumentCode :
3203971
Title :
A PV module with an active area utilization of 99.8%
Author :
Glatfelter, T. ; Lycette, M. ; Akkashian, E. ; Hoffman, K.
Author_Institution :
United Solar Syst. Corp., Troy, MI, USA
fYear :
1996
fDate :
13-17 May 1996
Firstpage :
1173
Lastpage :
1176
Abstract :
We have developed a laser-interconnected high-efficiency a-Si alloy module with an active area utilization of 99.8%. This structure uses very small through-hole contact points to collect current from the TCO to the more conductive stainless steel substrate, resulting in a large-area parallel-connected module with very little shadow loss. In addition to a dramatic increase in the area utilization we have also demonstrated great potential for improving the manufacturing process and reducing the cost of our modules. The improvement in the manufacturing process of these modules is a result of the high degree of automation that can be obtained using this laser process. The improved surface feature height of this module over the conventional finger designs will allow us to significantly reduce the thickness of the encapsulation materials. We will present details on an 11.5% multi-junction device using this advanced process
Keywords :
Ge-Si alloys; amorphous semiconductors; elemental semiconductors; semiconductor device packaging; solar cell arrays; solar cells; stainless steel; substrates; 11.5 percent; PV module; SiGe; active area utilization; conductive stainless steel substrate; cost reduction; current collection; encapsulation materials; high-efficiency; laser-interconnected a-Si alloy module; manufacturing process; multi-junction solar cell; parallel-connected module; surface feature height; through-hole contact points; Costs; Electrodes; Encapsulation; Insulation; Manufacturing processes; Optical design; Optical materials; Steel; Substrates; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference, 1996., Conference Record of the Twenty Fifth IEEE
Conference_Location :
Washington, DC
ISSN :
0160-8371
Print_ISBN :
0-7803-3166-4
Type :
conf
DOI :
10.1109/PVSC.1996.564341
Filename :
564341
Link To Document :
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