Title :
Characterization of silicon solar cells with interdigitated contacts
Author :
Schumacher, J.O. ; Dicker, J. ; Glunz, S. ; Hebling, C. ; Knobloch, J. ; Warta, W. ; Wettling, W.
Author_Institution :
Fraunhofer-Inst. fur Solare Energiesysteme, Freiburg, Germany
fDate :
29 Sep-3 Oct 1997
Abstract :
The characterization of two types of silicon solar cells with interdigitated metal grids processed at Fraunhofer-ISE is presented in this paper: the 19.2% efficient thin-film silicon on insulator (SOI) cell and a 21.4% rear contact cell (RCC). The spectrally resolved reflection and absorption properties of the cells are simulated with the 3D ray tracing program RAYN. Optical generation profiles calculated with RAYN are utilized in the device simulator DESSIS to model the observed electrical properties. The successful modelling allows predictions of the performance of thinner SOI cells and RCC cells processed from lower quality material
Keywords :
electronic engineering computing; elemental semiconductors; ray tracing; semiconductor device models; semiconductor thin films; semiconductor-metal boundaries; silicon; silicon-on-insulator; software packages; solar cells; 19.2 percent; 21.4 percent; 3D ray tracing program; DESSIS; RAYN; Si; Si solar cell characterisation; device simulator; interdigitated contacts; interdigitated metal grids; optical generation profiles; performance prediction; rear contact cell; spectrally resolved absorption properties; spectrally resolved reflection properties; thin-film silicon on insulator; Absorption; Contacts; Metal-insulator structures; Optical devices; Optical reflection; Photovoltaic cells; Ray tracing; Semiconductor thin films; Silicon on insulator technology; Solar power generation;
Conference_Titel :
Photovoltaic Specialists Conference, 1997., Conference Record of the Twenty-Sixth IEEE
Conference_Location :
Anaheim, CA
Print_ISBN :
0-7803-3767-0
DOI :
10.1109/PVSC.1997.653927
