Title :
Free charge carrier induced refractive index modulation of crystalline silicon
Author_Institution :
Dept. of Electr. & Comput. Syst. Eng., Monash Univ., Clayton, VIC, Australia
Abstract :
New relationships for the free carrier induced refractive index modulation of crystalline silicon at 1.3 and 1.55 μm are derived. Free electrons are more effective in perturbing the refractive index compared to free holes.
Keywords :
elemental semiconductors; refractive index; silicon; Si; crystalline silicon; free charge carrier induced refractive index modulation; free electrons; Absorption; Charge carrier processes; Doping; Refractive index; Scattering; Semiconductor process modeling; Silicon;
Conference_Titel :
Group IV Photonics (GFP), 2010 7th IEEE International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-6344-2
DOI :
10.1109/GROUP4.2010.5643412
