DocumentCode :
3204042
Title :
Microcrystalline SiO and its Application to Solar Cell
Author :
Pingate, Nirut ; Yotsaksri, Decha ; Sichanugris, Porponth
Author_Institution :
Nat. Sci. & Technol. Dev. Agency, Pathumthani
Volume :
2
fYear :
2006
fDate :
38838
Firstpage :
1507
Lastpage :
1508
Abstract :
As microcrystalline silicon oxide (muc-SiO) is reported to be more promising material than microcrystalline silicon carbide for the application to solar cells, both of high efficiency amorphous (top cell) and microcrystalline (bottom cell) silicon solar cells fabricated on tin oxide coated glass substrate have been developed by using muc-SiO p-layer and buffer i-layer. High VHF frequency of 60 MHz and carbon dioxide gas are used for their deposition. ZnO deposited by DC sputtering is coated on Asahi´s type U tin oxide in order to promote the crystallization of the muc-SiO p-layer. It was found that the top cell with this novel muc-SiO p-layer has higher cell efficiency than the one with normal SiO p-layer. Furthermore, the microcrystalline bottom cell with novel muc-SiO p-layer and muc-SiO buffer layer has higher performance than the one with normal muc-Si p-layer
Keywords :
II-VI semiconductors; buffer layers; crystallisation; electrical conductivity; elemental semiconductors; plasma deposited coatings; semiconductor materials; semiconductor thin films; silicon; silicon compounds; solar cells; sputtered coatings; wide band gap semiconductors; zinc compounds; 60 MHz; Asahi´s type U tin oxide; DC sputtering; SnO2-ZnO-SiO-Si; bottom cell; buffer layer; carbon dioxide gas; crystallization; electrical conductivity; high efficiency amorphous top cell; microcrystalline silicon carbide; microcrystalline silicon oxide; microcrystalline silicon solar cells; tin oxide coated glass substrate; Amorphous materials; Carbon dioxide; Crystallization; Frequency; Glass; Photovoltaic cells; Silicon carbide; Sputtering; Tin; Zinc oxide;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Energy Conversion, Conference Record of the 2006 IEEE 4th World Conference on
Conference_Location :
Waikoloa, HI
Print_ISBN :
1-4244-0017-1
Electronic_ISBN :
1-4244-0017-1
Type :
conf
DOI :
10.1109/WCPEC.2006.279756
Filename :
4059934
Link To Document :
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