Title :
Progress on the LOPE (local point contact and shallow angle evaporation) silicon solar cell
Author :
Terheiden, B. ; Kuhn, R. ; Zechner, C. ; Fath, P. ; Willeke, G. ; Bucher, E.
Author_Institution :
Fakultat fur Phys., Konstanz Univ., Germany
fDate :
29 Sep-3 Oct 1997
Abstract :
The LOPE-Solar cell concept is based on a V-textured front surface with local point contacts which are interconnected by the SAFE (shallow angle finger evaporation) technique after a heavy phosphorus diffusion. Three dimensional computer simulations were carried out to examine the influence of the point contact distance parallel and perpendicular to the V-grooves. Additionally two different emitters, two different sheet resistances under the metal contact and a small and a larger contact area were investigated. A plating sequence for Ni-plating has been successfully implemented in the LOPE-cell process to complete the metallisation of the local openings. A detailed characterisation of the LOPE-cell is presented
Keywords :
chemical vapour deposition; digital simulation; electroplated coatings; elemental semiconductors; nickel; phosphorus; point contacts; power engineering computing; semiconductor device metallisation; silicon; solar cells; LOPE-Solar cell concept; Ni-plating; Si:P; V-textured front surface; contact area; emitters; heavy phosphorus diffusion; local openings; local point contacts; metal contact; metallisation; parallel point contact distance; perpendicular point contact distance; plating sequence; shallow angle finger evaporation technique; sheet resistances; three dimensional computer simulations; Artificial intelligence; Computer simulation; Etching; Fingers; Lithography; Metallization; Photovoltaic cells; Physics; Scanning electron microscopy; Silicon;
Conference_Titel :
Photovoltaic Specialists Conference, 1997., Conference Record of the Twenty-Sixth IEEE
Conference_Location :
Anaheim, CA
Print_ISBN :
0-7803-3767-0
DOI :
10.1109/PVSC.1997.654073