Title :
Interpretation of Dual Beam Optical Modulation (DBOM) measurements in thin-film materials
Author :
Simacek, Thomas K. ; Gray, Jeffery L.
Author_Institution :
Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA
fDate :
29 Sep-3 Oct 1997
Abstract :
Dual Beam Optical Modulation (DBOM) is a useful tool for the measurement of carrier lifetime in semiconductors. The method is usually applied to bulk semiconductor only. This paper discusses how device simulation approach can be used to interpret results of the method applied to the thin film CuInSe2 solar cell. In these materials the simple theory typically based on minority carrier diffusion equation and used to interpret the DBOM measurement is no longer valid. The paper shows that detailed numerical device simulation can be used to provide interpretation of the DBOM measurement of solar cell carrier lifetime. The results prove that majority carrier depletion region shrink is the main factor observed in these measurements
Keywords :
carrier lifetime; copper compounds; indium compounds; optical modulation; optical variables measurement; semiconductor thin films; solar cells; ternary semiconductors; CuInSe2; Dual Beam Optical Modulation measurements; majority carrier depletion region shrink; minority carrier diffusion equation; numerical device simulation; solar cell carrier lifetime; thin film CuInSe2 solar cell; Charge carrier lifetime; Charge carrier processes; Computational Intelligence Society; Numerical simulation; Optical beams; Optical films; Optical materials; Optical modulation; Semiconductor materials; Semiconductor thin films;
Conference_Titel :
Photovoltaic Specialists Conference, 1997., Conference Record of the Twenty-Sixth IEEE
Conference_Location :
Anaheim, CA
Print_ISBN :
0-7803-3767-0
DOI :
10.1109/PVSC.1997.654131
