Title :
Polycrystalline GaAs solar cells on low-cost Silicon-FilmTM substrates
Author :
Mauk, Michael G. ; Feyock, B.W. ; Hall, Robert B. ; Avanaugh, K. Athleen Duganc ; Cotter, Jeffreey
Author_Institution :
AstroPower Inc., Newark, DE, USA
fDate :
29 Sep-3 Oct 1997
Abstract :
The authors assess the potential of a low-cost, large-area Silicon-FilmTM sheet as a substrate for thin-film polycrystalline GaAs solar cells. Silicon-FilmTM is a relatively inexpensive material on which large-grain (>2 mm) polycrystalline GaAs films can be formed. The GaAs epitaxial layers are grown by a simple close-spaced vapor transport (CSVT) technique using water vapor as a transport agent. A recrystallized Ge1-xSi x buffer layer between the GaAs epilayer and Silicon-FilmTM substrate can facilitate growth of the GaAs. Selective epitaxy on patterned, oxide-masked substrates is effective in reducing thermal stress effects
Keywords :
III-V semiconductors; gallium arsenide; semiconductor device testing; semiconductor epitaxial layers; semiconductor growth; semiconductor thin films; solar cells; substrates; vapour phase epitaxial growth; GaAs; GaAs polycrystalline solar cells; Silicon-FilmTM substrates; buffer layer; close-spaced vapor transport technique; epilayer; large-grain films growth; patterned oxide-masked substrates; selective epitaxy; thermal stress effects; thin-film solar cells; water vapor transport agent; Buffer layers; Epitaxial growth; Epitaxial layers; Gallium arsenide; Photovoltaic cells; Semiconductor films; Semiconductor thin films; Sheet materials; Substrates; Thermal stresses;
Conference_Titel :
Photovoltaic Specialists Conference, 1997., Conference Record of the Twenty-Sixth IEEE
Conference_Location :
Anaheim, CA
Print_ISBN :
0-7803-3767-0
DOI :
10.1109/PVSC.1997.654140
