Title :
Effect of CdS annealing in (CdCl2+CdS) atmosphere on CdTe cells
Author :
Park, Sung Chan ; Han, Byung Wook ; Ahn, Jin Hyung ; Ahn, Byung Tae ; Kim, Donghwan
Author_Institution :
Dept. of Mater. Sci. & Eng., Korea Adv. Inst. of Sci. & Technol., Taejon, South Korea
fDate :
29 Sep-3 Oct 1997
Abstract :
To increase grain size, solution-grown CdS films were annealed at 560°C in a (CdCl2+CdS) atmosphere, instead of CdCl2 only environment. CdS was used to prevent the evaporation of CdS from the films. After 5 min annealing, the grain size increased from 10 nm to 100 nm and the surface morphology was very smooth and densely packed. The optical transmittance was greatly improved near Eg, compared to that of CdS films annealed at 400°C for 30 min in H2. The efficiency of the CdTe solar cell was improved by fabricating with the CdS layer annealed in a (CdCl2 +CdS) atmosphere. The increase of the efficiency was mainly due to the increase of fill factor, which might be due to the decrease of defects at CdTe bulk and the CdS/CdTe interface
Keywords :
II-VI semiconductors; annealing; cadmium compounds; crystal morphology; grain size; semiconductor growth; semiconductor thin films; solar cells; 10 to 100 nm; 30 min; 400 C; 5 min; 560 C; CdCl2-CdS; CdCl2/CdS atmosphere; CdS; CdS annealing; CdTe; CdTe bulk defects; CdTe cells; CdTe-CdS; annealing; fill factor; grain size; optical transmittance; solar cell efficiency; solution-grown CdS films; surface morphology; Annealing; Atmosphere; Cascading style sheets; Coatings; Grain size; Materials science and technology; Optical films; Powders; Scanning electron microscopy; Substrates;
Conference_Titel :
Photovoltaic Specialists Conference, 1997., Conference Record of the Twenty-Sixth IEEE
Conference_Location :
Anaheim, CA
Print_ISBN :
0-7803-3767-0
DOI :
10.1109/PVSC.1997.654145
