Title :
Recent progress in amorphous silicon alloy leading to 13% stable cell efficiency
Author :
Yang, Jeffrey ; Banerjee, Arindam ; Glatfelter, Troy ; Sugiyama, Shuichiro ; Guha, Subhendu
Author_Institution :
United Solar Syst. Corp., Troy, MI, USA
fDate :
29 Sep-3 Oct 1997
Abstract :
Significant progress has been made in amorphous silicon (a-Si) alloy solar cells using a spectral-splitting, triple-junction structure in which the bandgap of each component cell is designed to absorb a different portion of the solar spectrum. Key factors leading to the stable 13% active-area cell efficiency include: (i) using a high hydrogen dilution technique during the growth of the intrinsic layers, (ii) employing a bandgap profiling design for the a-SiGe alloy cells, (iii) incorporating appropriate current mismatch for component cells, (iv) developing microcrystalline doped layers for the tunnel junctions and the window layer, (v) enhancing the light trapping effect of the textured back reflector, and (vi) improving the performance of the top conducting oxide layer. These factors along with other developments relevant to the achievement of high efficiency cells are discussed
Keywords :
Ge-Si alloys; amorphous semiconductors; elemental semiconductors; energy gap; p-n junctions; solar cells; 13 percent; Si; SiGe; a-SiGe alloy solar cells; bandgap; bandgap profiling design; current mismatch; high efficiency; high hydrogen dilution technique; intrinsic layers growth; light trapping effect enhancement; microcrystalline doped layers; spectral-splitting triple-junction structure; textured back reflector; top conducting oxide layer; tunnel junctions; window layer; Amorphous silicon; Hydrogen; Impurities; Laboratories; Lead; Manufacturing; Photovoltaic cells; Silicon alloys; Solar system; Stability;
Conference_Titel :
Photovoltaic Specialists Conference, 1997., Conference Record of the Twenty-Sixth IEEE
Conference_Location :
Anaheim, CA
Print_ISBN :
0-7803-3767-0
DOI :
10.1109/PVSC.1997.654153