High Conductive TiO2 Films Due to Auto Doping by Hot Wire CVD Method for Protecting Material of TCO Against Atomic Hydrogen Exposures

Author

lida, T. ; Takamidou, Yasuhiko ; Watabe, Takafumi ; Yoshida, Norimitsu ; Itoh, Takashi ; Nonomura, Shuichi

Author_Institution

Environ. & Renewable Energy Syst. Div., Gifu Univ.

Volume

2

fYear

2006

fDate

38838

Firstpage

1537

Lastpage

1539

Abstract

TiO₂ films as a protecting material of transparent conducting oxide (TCO) against atomic hydrogen exposures for Si thin film solar cells have been prepared by hot wire CVD method. It is found that dark conductivity of the film at room temperature reaches to the order of 10^-1 S/cm. This value is 3 orders of magnitude higher than that of Nb-doped TiO₂ films by RF magnetron sputtering method in our previous studies. The improvement of the dark conductivity is mainly due to auto doping of tantalum (Ta) from the filament. Structural and optical properties of the film are also reported

Keywords

chemical vapour deposition; dark conductivity; doping; elemental semiconductors; protective coatings; semiconductor thin films; silicon; solar cells; tantalum; thin film devices; titanium compounds; 293 to 298 K; RF magnetron sputtering method; Si; TiO₂:Ta; atomic hydrogen exposures; dark conductivity; doping; hot wire CVD method; optical properties; silicon thin film solar cells; structural properties; thin films; transparent conducting oxide; Conducting materials; Conductive films; Conductivity; Doping; Hydrogen; Optical films; Protection; Semiconductor films; Semiconductor thin films; Wire;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Energy Conversion, Conference Record of the 2006 IEEE 4th World Conference on

Conference_Location

Waikoloa, HI

Print_ISBN

1-4244-0017-1

Electronic_ISBN

1-4244-0017-1

Type

conf

DOI

10.1109/WCPEC.2006.279776

Filename

4059942