As grown and light soaked defect densities in a-Si:H with sharp band tails

Author

Ganguly, Gautam ; Matsuda, Akihisa

Author_Institution

Electrotech. Lab., Tsukuba, Japan

fYear

1996

fDate

13-17 May 1996

Firstpage

1177

Lastpage

1180

Abstract

a-Si:H prepared using controlled-energy ion-bombardment is found to exhibit significantly sharper conduction and, more importantly, valence band tail states distribution using transient photoconductivity measurements. The expectation that material having sharp valence band tail will have fewer as-grown and light soaked defects has been tested using quasi-static capacitance voltage measurements. We find no correlation between the valence band tail width and the as-grown or light induced defect densities

Keywords

amorphous semiconductors; capacitance measurement; conduction bands; defect states; elemental semiconductors; hole mobility; hydrogen; photoconductivity; plasma CVD coatings; silicon; solar cells; valence bands; voltage measurement; Si:H; a-Si:H; as-grown defect densities; conduction; controlled-energy ion-bombardment; light induced defect densities; light soaked defect densities; photovoltaic material; plasma CVD; quasi-static capacitance voltage measurements; sharp band tails; transient photoconductivity measurements; valence band tail states distribution; Capacitance measurement; Capacitance-voltage characteristics; Conducting materials; Density measurement; Lighting control; Materials testing; Photoconducting materials; Photoconductivity; Probability distribution; Tail;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 1996., Conference Record of the Twenty Fifth IEEE

Conference_Location

Washington, DC

ISSN

0160-8371

Print_ISBN

0-7803-3166-4

Type

conf

DOI

10.1109/PVSC.1996.564342

Filename

564342