Title :
Fast deposited microcrystalline silicon solar cells
Author :
Torres, P. ; Meier, J.P. ; Kroll, U. ; Beck, N. ; Keppner, Herbert ; Shah, Aamer
Author_Institution :
Inst. of Microtechnol., Neuchatel Univ.
fDate :
29 Sep-3 Oct 1997
Abstract :
Microcrystalline silicon solar cells with AM 1.5 conversion efficiency above 5% have been deposited at deposition rates in excess of 10 Å/s. This is achieved by VHF-GD at an excitation frequency of 130 MHz. By increasing the plasma power at a dilution ratio of 7.5 % silane/(silane+hydrogen) there first appears a morphological transition from a-Si:H to μc-Si:H and then an increase in deposition rate. Crystallographic properties and solar cell efficiencies vary thereby in a significant manner
Keywords :
elemental semiconductors; hydrogen; plasma CVD; plasma CVD coatings; semiconductor thin films; silicon; solar cells; μc-Si:H; 130 MHz; AM 1.5 conversion efficiency; Si solar cells; Si:H; VHF-GD; a-Si:H; crystallographic properties; deposition rate; dilution ratio; excitation frequency; fast deposited microcrystalline solar cells; morphological transition; plasma power; silane/(silane+hydrogen) ratio; solar cell efficiencies; Amorphous materials; Crystallography; Force measurement; Frequency; Photovoltaic cells; Photovoltaic systems; Plasma properties; Semiconductor thin films; Silicon; Solar power generation;
Conference_Titel :
Photovoltaic Specialists Conference, 1997., Conference Record of the Twenty-Sixth IEEE
Conference_Location :
Anaheim, CA
Print_ISBN :
0-7803-3767-0
DOI :
10.1109/PVSC.1997.654188
