Empirical model for the transconductance-current dependence of short-channel MOSFETs

This work is concerned with the g_m-I dependence of sub-micrometer MOSFETs. The transconductance-current expression given by the Advanced Compact Model (ACM) is reviewed and simple modification is proposed. The modification yields an expression which (with proper parametrization) captures the g_m-I dependence of short-channel MOSFETs. The proposed expression is “universal” in the sense that it is capable of modeling the g_m-I dependence of long-channel MOSFETs, short-channel MOSFETs, and resistively-degenerated BJTs.