Title :
Ge/SiGe quantum wells structures for optical modulation
Author :
Chaisakul, P. ; Marris-Morini, D. ; Isella, G. ; Chrastina, D. ; Le Roux, X. ; Gatti, E. ; Edmond, S. ; Osmond, J. ; Cassan, E. ; Vivien, L.
Author_Institution :
Inst. d´´Electron. Fondamentale, Univ. Paris-Sud 11, Orsay, France
Abstract :
Room-temperature Quantum-confined Stark effect (QCSE) in Ge/SiGe multiple quantum wells (MQWs) is demonstrated using optical transmission and photocurrent measurements. Effective absorption spectra of the heterostructures are presented as a function of electrical field.
Keywords :
Stark effect; germanium; semiconductor quantum wells; silicon compounds; absorption spectra; heterostructures; multiple quantum wells; optical modulation; optical transmission; quantum wells structures; rom-temperature; stark effect; temperature 293 K to 298 K; Absorption; Optical variables measurement; P-i-n diodes; Photoconductivity; Quantum well devices; Silicon; Silicon germanium; Ge/SiGe; Quantum-confined Stark effect; multiple quantum wells;
Conference_Titel :
Group IV Photonics (GFP), 2010 7th IEEE International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-6344-2
DOI :
10.1109/GROUP4.2010.5643427
