Title :
Low-temperature germanium ultra-high vacuum chemical vapor deposition for back-end photonic device integration
Author :
McComber, Kevin A. ; Liu, Jifeng ; Michel, Jurgen ; Kimerling, Lionel C.
Author_Institution :
Dept. of Mater. Sci. & Eng., Massachusetts Inst. of Technol., Cambridge, MA, USA
Abstract :
This work demonstrates single-crystal germanium deposited by ultra-high vacuum chemical vapor deposition (UHVCVD) on amorphous silicon (a-Si), with all processing performed at temperatures below 450°C. This material shows promise for the successful backend fabrication of photonic devices.
Keywords :
chemical vapour deposition; germanium; integrated optics; amorphous silicon; back-end photonic device integration; low-temperature germanium ultra-high vacuum; temperature 450 degC; ultra-high vacuum chemical vapor deposition; Fabrication; Germanium; Photodetectors; Photonics; Silicon; Substrates; Single-crystal germanium; UHVCVD; geometrically-confined lateral growth; grain engineering;
Conference_Titel :
Group IV Photonics (GFP), 2010 7th IEEE International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-6344-2
DOI :
10.1109/GROUP4.2010.5643429
