Incorporation of Higher-Order Silane Radicals Into A-Si:H Films of High Stability Against Light Exposure

Author

Shiratani, Masaharu ; Iwashita, Shinya ; Bando, Kouki ; Inoue, Toshihisa ; Koga, Kazunori

Author_Institution

Graduate Sch. of Inf. Sci. & Electr. Eng., Kyushu Univ., Fukuoka

Volume

2

fYear

2006

fDate

38838

Firstpage

1596

Lastpage

1599

Abstract

We have studied effects of higher-order silane (HOS) radicals on stability of a-Si:H films against light exposure by using a multi-hollow discharge plasma CVD method. For the method, a short gas residence time of ms in the discharge regions suppresses growth of a-Si:H nano-particles (hereafter referred to as clusters) and gas viscous force drives clusters toward the downstream region. Therefore, we can deposit a-Si:H films without incorporating clusters in the upstream region and such films show high stability. The method is effective in suppressing cluster amount in the discharges, while the method has little effects on Si₂H₅ and Si₃H₇ densities there

Keywords

elemental semiconductors; hydrogen; nanoparticles; plasma CVD; semiconductor growth; semiconductor thin films; silicon; silicon compounds; Si:H; Si₂H₅; Si₃H₇; higher-order silane radicals; light induced degradation; multihollow discharge plasma CVD; nanoparticles; thin films; Amorphous materials; Degradation; Density measurement; Electrodes; Hydrogen; Inductors; Mass spectroscopy; Plasma measurements; Plasma stability; Semiconductor films;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Energy Conversion, Conference Record of the 2006 IEEE 4th World Conference on

Conference_Location

Waikoloa, HI

Print_ISBN

1-4244-0017-1

Electronic_ISBN

1-4244-0017-1

Type

conf

DOI

10.1109/WCPEC.2006.279791

Filename

4059957