Title :
A Real-Time Study of the a-Si:H/c-Si Interface Formation using Ellipsometry, Infrared Spectroscopy, and Second Harmonic Generation
Author :
Kessels, W.M.M. ; van den Oever, P.J. ; Gielis, J.J.H. ; Hoex, B. ; van de Sanden, Mauritius C. M.
Author_Institution :
Dept. of Appl. Phys., Eindhoven Univ. of Technol.
Abstract :
The formation of the c-Si/a-Si:H interface has been studied in real time during the deposition of a-Si:H on H-terminated c-Si using hot-wire CVD. Several optical diagnostics were used simultaneously: spectroscopic ellipsometry revealing information about the film morphology during the initial stage of growth; attenuated total reflection infrared spectroscopy yielding the H-bonding configuration and depth profile; and optical second harmonic generation providing insight into c-Si and a-Si:H interface and surface states. In this paper these techniques are introduced and initial results are presented
Keywords :
amorphous semiconductors; attenuated total reflection; chemical vapour deposition; elemental semiconductors; ellipsometry; hydrogen; infrared spectra; optical harmonic generation; semiconductor growth; semiconductor heterojunctions; semiconductor thin films; silicon; surface states; H-bonding configuration; Si-Si:H; attenuated total reflection infrared spectroscopy; c-Si/a-Si:H interface; film morphology; hot-wire CVD; interface formation; optical diagnostics; optical second harmonic generation; spectroscopic ellipsometry; surface states; Ellipsometry; Frequency conversion; Infrared spectra; Morphology; Nonlinear optics; Optical attenuators; Optical films; Optical harmonic generation; Optical reflection; Spectroscopy;
Conference_Titel :
Photovoltaic Energy Conversion, Conference Record of the 2006 IEEE 4th World Conference on
Conference_Location :
Waikoloa, HI
Print_ISBN :
1-4244-0017-1
Electronic_ISBN :
1-4244-0017-1
DOI :
10.1109/WCPEC.2006.279796
