SiCX Alloy Films Deposited by Hot-Wire CVD using SiH3CH3 as Carbon Sauce

The hetero-structured SiC_x films have been deposited by hot-wire CVD using SiH₃CH₃ as carbon source gas. Although the carbon source gas ratio and filament temperature in the deposition using SiH₃CH₃ were smaller than those using C₂H₆, the carbon content in the SiH₃ CH₃ sample was almost the same as that in the C₂ H₆ sample. The optical energy gap in the SiH₃CH₃ sample was larger than that in the C₂ H₆ sample. The SiH₃CH₃ sample deposited under the optimized deposition condition showed wide optical energy gap of 1.99 eV and large dark conductivity of 15.1 S/cm