DocumentCode
3204785
Title
PVT robust design of wideband CT delta sigma modulators including finite GBW compensation
Author
Kauffman, John G. ; Brückner, Timon ; Ortmanns, Maurits
Author_Institution
Inst. of Microelectron., Univ. of Ulm, Ulm, Germany
fYear
2012
fDate
5-8 Aug. 2012
Firstpage
382
Lastpage
385
Abstract
This paper demonstrates the effectiveness and robustness of amplifier finite gain bandwidth compensation within a wideband third order continuous time delta sigma modulator and the effects of process, mismatch and temperature on modulator stability. In many state of the art designs, GBW is kept safely above the sampling frequency of the modulator, which suffers a power penalty especially for high-speed designs. While gain errors and phase shifts in the loop filter due to finite GBW can be compensated for, its robustness is often questionable, especially if an additional excess loop delay is concerned. The robustness of such a compensation is analyzed for an exemplary CT DSM with an fS of 500MHz which has been designed in a 1.2V 90nm TSMC CMOS process. Therefore, the amplifiers are compensated for finite GBW values of 500 MHz, 300MHz and 600 MHz, and all three parasitic extracted amplifiers are analyzed over PVT. The simulated modulator performance of 72 dB SNDR over a 25MHz bandwidth is only degraded by 2 dB over corner simulations. In comparison to Monte Carlo analysis of all amplifiers, this reveals a modulator robustness to amplifier finite GBW as much as ±35% over process and mismatch, which emphasizes the feasibility of the approach.
Keywords
CMOS integrated circuits; Monte Carlo methods; amplifiers; circuit stability; compensation; delta-sigma modulation; integrated circuit design; modulators; sampling methods; temperature; CT DSM; Monte Carlo analysis; PVT robust design; SNDR; TSMC CMOS process; amplifier finite GBW; amplifier finite gain bandwidth compensation; bandwidth 25 MHz; excess loop delay; finite GBW compensation; frequency 300 MHz; frequency 500 MHz; frequency 600 MHz; gain error; high-speed design; loop filter; modulator performance; modulator robustness; modulator stability; noise figure 72 dB; parasitic extracted amplifier; phase shift; power penalty; sampling frequency; size 90 nm; temperature; voltage 1.2 V; wideband CT delta sigma modulator; wideband third order continuous time delta sigma modulator; Analytical models; Ash; Bandwidth; Delay; Delta-sigma modulation; Modulation; Robustness;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems (MWSCAS), 2012 IEEE 55th International Midwest Symposium on
Conference_Location
Boise, ID
ISSN
1548-3746
Print_ISBN
978-1-4673-2526-4
Electronic_ISBN
1548-3746
Type
conf
DOI
10.1109/MWSCAS.2012.6292037
Filename
6292037
Link To Document