Title :
State-of-the-art performance of InP-based MMICs
Author_Institution :
Space & Electron. Group, TRW Inc., Redondo Beach, CA, USA
Abstract :
This paper presents results of InP-based monolithic millimeter-wave circuits developed using the most advanced InP-based HEMT and HBT MMIC technologies. For HEMT MMICs, a 155 GHz low noise amplifier (LNA) has demonstrated decent gain performance, while a 94 GHz power amplifier (PA) has achieved the best output power at this frequency. For HBT MMIC technology, a 94 GHz fundamental mode VCO has been fabricated and tested. Moreover, we have successfully integrated the HEMT and HBT devices on the same InP substrate and demonstrated a 24-GHz frequency source consisting an HBT VCO and a HEMT buffer amplifier on a single chip. These results represent state-of-the-art development status of InP-based MMICs
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; MMIC oscillators; MMIC power amplifiers; bipolar MIMIC; field effect MIMIC; heterojunction bipolar transistors; indium compounds; integrated circuit technology; millimetre wave amplifiers; millimetre wave oscillators; millimetre wave power amplifiers; 24 to 155 GHz; EHF; HBT MMIC technology; HBT VCO; HEMT MMIC technology; HEMT buffer amplifier; InP; InP-based MIMIC; LNA; MM-wave ICs; combined HBT/HEMT chip; frequency source; low noise amplifier; monolithic millimeter-wave circuits; power amplifier; Frequency; HEMTs; Heterojunction bipolar transistors; Low-noise amplifiers; MMICs; Millimeter wave circuits; Performance gain; Power amplifiers; Power generation; Voltage-controlled oscillators;
Conference_Titel :
Microwave Conference Proceedings, 1997. APMC '97, 1997 Asia-Pacific
Print_ISBN :
962-442-117-X
DOI :
10.1109/APMC.1997.654598
