Title :
Electrical Characterization of Silicon Layers Grown by Convection-Assisted Chemical Vapour Deposition (CoCVD)
Author :
Grosch, M. ; Burkert, I. ; Kunz, T. ; Gazuz, V. ; Gawehns, N. ; Scheffler, M. ; Auer, R.
Author_Institution :
Bavarian Center for Appl. Energy Res., Erlangen
Abstract :
In this work, we present the electrical properties of thin epitaxial silicon layers grown by convection-assisted chemical vapour deposition (CoCVD). Mono-crystalline (100)-orientated Fz silicon wafers were used as test substrates. The thin layers were investigated by four-point-probing and Hall-measurement. Structural information was obtained by chemical etching with a Secco etchant. First solar cells with efficiencies of 11% were manufactured on 8.5mum-thick Si film and characterized
Keywords :
Hall mobility; chemical vapour deposition; dislocations; electrical resistivity; elemental semiconductors; etching; semiconductor epitaxial layers; semiconductor growth; silicon; solar cells; stacking faults; 11 percent; 8.5 micron; CoCVD; Hall mobility; Hall-measurement; Secco etchant; Si; chemical etching; convection-assisted chemical vapour deposition; dislocations; electrical characterization; epitaxial silicon layers growth; four-point-probing; monocrystalline silicon wafers; solar cells; stacking faults; Charge carriers; Chemical vapor deposition; Conductivity; Etching; Fluid flow; Manufacturing; Photovoltaic cells; Silicon; Substrates; Testing;
Conference_Titel :
Photovoltaic Energy Conversion, Conference Record of the 2006 IEEE 4th World Conference on
Conference_Location :
Waikoloa, HI
Print_ISBN :
1-4244-0017-1
Electronic_ISBN :
1-4244-0017-1
DOI :
10.1109/WCPEC.2006.279808
