• DocumentCode
    3204911
  • Title

    A high speed low power modulo 2n+1 multiplier design using carbon-nanotube technology

  • Author

    Qi, He ; Kim, Yong-Bin ; Choi, Minsu

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Northeastern Univ., Boston, MA, USA
  • fYear
    2012
  • fDate
    5-8 Aug. 2012
  • Firstpage
    406
  • Lastpage
    409
  • Abstract
    Modulo 2n+1 multiplier is one of the critical components in the area of digital signal processing, residue arithmetic, and data encryption that demand high-speed and low-power operation. In this paper, a new circuit implementation of a high-speed low-power modulo 2n+1 multiplier is proposed. It has three major stages: partial product generation stage, partial product reduction stage, and the final adder stage. The proposed structure introduces a new MUX-based compressor in the partial product reduction stage to reduce power and increase speed, and in the final adder stage, the Sparse-tree-based inverted end-around-carry adder reduces the number of critical path circuit blocks, also avoids wire interconnection problem. The proposed multiplier is implemented using both 32nm CNTFET (Carbon-Nanotube FET) and bulk CMOS technology for performance comparison. The CNTFET-based design dramatically decreases the PDP (Power Delay Product) of the circuit. The simulation results demonstrate that the power consumption of CNTFET-based multiplier is at average 5.72 times less than its CMOS counterpart, while the PDP of CNTFET is 94 times less than the CMOS one.
  • Keywords
    CMOS integrated circuits; adders; carbon nanotube field effect transistors; logic design; low-power electronics; multiplying circuits; CNTFET-based design; MUX-based compressor; adder stage; bulk CMOS technology; carbon-nanotube FET; carbon-nanotube technology; circuit implementation; data encryption; digital signal processing; modulo 2n+1 multiplier design; partial product generation stage; partial product reduction stage; performance comparison; power delay product; power reduction; residue arithmetic; size 32 nm; sparse-tree-based inverted end-around-carry adder; Adders; CMOS integrated circuits; CMOS technology; CNTFETs; Computer architecture; Delay; Vectors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems (MWSCAS), 2012 IEEE 55th International Midwest Symposium on
  • Conference_Location
    Boise, ID
  • ISSN
    1548-3746
  • Print_ISBN
    978-1-4673-2526-4
  • Electronic_ISBN
    1548-3746
  • Type

    conf

  • DOI
    10.1109/MWSCAS.2012.6292043
  • Filename
    6292043