Title :
Trends in radiation susceptibility of commercial DRAMs for space systems
Author :
Miller, Chris ; Owen, Russ ; Rose, Matthew ; Rutt, Paul M. ; Schaefer, Justin ; Troxel, Ian A.
Author_Institution :
SEAKR Eng., Inc., Centennial, CO
Abstract :
Radiation effects such as TID and SEE including single and multiple bit upsets and SEFI modes need to be characterized and considered in systems using COTS memory for space radiation environments. We present on-orbit data collected from commercial DRAM parts used in SSRs designed and built by SEAKR Engineering. Upset rates for on-orbit COTS DRAM memories are presented and compared to rates predicted by CREME96 for three generations of commercial DRAM technology including 64 Mb EDO DRAM, 128 Mb SDRAM, and 256 Mb SDRAM.
Keywords :
DRAM chips; radiation effects; DRAM; commercial off the shelf memory; dynamic random access memory; multiple bit upsets; radiation susceptibility; single bit upsets; single event functional interrupts; total ionizing dose; Aerospace testing; Earth; Magnetic fields; Magnetosphere; Protons; Random access memory; Single event upset; Space missions; Space technology; Sun;
Conference_Titel :
Aerospace conference, 2009 IEEE
Conference_Location :
Big Sky, MT
Print_ISBN :
978-1-4244-2621-8
Electronic_ISBN :
978-1-4244-2622-5
DOI :
10.1109/AERO.2009.4839511
