Title :
SiGe BiCMOS fully differential amplifier for extreme temperature range applications
Author :
Cornett, Kimberly J. ; Fu, Guoyuan ; Escorcia, Ivonne ; Mantooth, H. Alan
Author_Institution :
Electr. Eng. Dept., Univ. of Arkansas, Fayetteville, AR
Abstract :
A BiCMOS fully differential amplifier was designed for use with a specified power supply of 3.3 V, requiring a 100 muA current bias and utilizing only heterojunction bipolar npn and PMOS transistors because of their demonstrated performance in both extreme temperature ranges (-180degC to +120degC) and radiation-rich environments. One unique feature of this design is that two common-mode feedback circuits were employed to control both the input stage and output stage independently. Regulating the common-mode level between the input and output stages produced better stability over temperature for each stage. Special considerations were taken in the layout to increase the immunity of latch-up and noise and decrease mismatch. The BiCMOS amplifier described successfully demonstrates the use of the commercially available IBM SiGe 5AM process to produce reliable operation in extreme temperature and radiation environments.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; MOSFET; differential amplifiers; heterojunction bipolar transistors; semiconductor materials; BiCMOS fully differential amplifier; PMOS transistors; SiGe; common-mode feedback circuits; common-mode level; heterojunction bipolar npn; power supply; temperature -180 degC to 120 degC; BiCMOS integrated circuits; Circuit stability; Differential amplifiers; Feedback circuits; Germanium silicon alloys; Heterojunctions; MOSFETs; Power supplies; Silicon germanium; Temperature distribution;
Conference_Titel :
Aerospace conference, 2009 IEEE
Conference_Location :
Big Sky, MT
Print_ISBN :
978-1-4244-2621-8
Electronic_ISBN :
978-1-4244-2622-5
DOI :
10.1109/AERO.2009.4839517
