DocumentCode :
320515
Title :
A new pinched-off cold FET model for the determination of small-signal equivalent circuit of a FET
Author :
Ooi, B.L. ; Kooi, P.S. ; Leong, M.S.
Author_Institution :
Commun. & Microwave Div., Nat. Univ. of Singapore, Singapore
fYear :
1997
fDate :
2-5 Dec 1997
Firstpage :
713
Abstract :
A pinched-off cold FET model is proposed to evaluate more accurately the parasitic gate and drain capacitances Cpg and Cpd. Coupled with the new model, a new algorithm for the determination of the small-signal equivalent circuit of a FET is also presented. Good agreement between measured and simulated S-parameters from 1-26.5 GHz of a 400 μm GaAs FET is obtained
Keywords :
S-parameters; capacitance; equivalent circuits; gallium arsenide; microwave field effect transistors; semiconductor device models; 1 to 26.5 GHz; 400 micron; GaAs; GaAs FET; S-parameters; parasitic drain capacitance; parasitic gate capacitance; pinched-off cold FET model; small-signal equivalent circuit; Bonding; Capacitance measurement; Circuit simulation; Diodes; Equivalent circuits; Frequency dependence; Gallium arsenide; MESFETs; Microwave FETs; Scattering parameters;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference Proceedings, 1997. APMC '97, 1997 Asia-Pacific
Print_ISBN :
962-442-117-X
Type :
conf
DOI :
10.1109/APMC.1997.654641
Filename :
654641
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=320515
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