DocumentCode :
320516
Title :
Nonlinear-dispersive GaAs FET drain-current model for harmonic balance simulation
Author :
Eccleston, KW
Author_Institution :
Dept. of Electr. Eng., Nat. Univ. of Singapore, Singapore
fYear :
1997
fDate :
2-5 Dec 1997
Firstpage :
717
Abstract :
Popular GaAs FET large-signal drain conduction current models depend only on instantaneous terminal voltages, and ignore important phenomena that result in low frequency dispersion. To be valid at microwave frequencies, both the DC and time-varying components of current must be accurately modelled. This paper proposes a GaAs FET drain current model, which includes rate-dependent body and thermal effects, and therefore has the capability to accurately predict both the DC and time-varying components of drain current. Further, this model is particularly suited to harmonic balance simulation of microwave circuits
Keywords :
III-V semiconductors; electric current; gallium arsenide; microwave circuits; microwave field effect transistors; nonlinear network analysis; semiconductor device models; DC component; FET drain-current model; GaAs; GaAs FET; harmonic balance simulation; low frequency dispersion; microwave circuits; microwave frequencies; nonlinear-dispersive drain-current model; rate-dependent body effects; thermal effects; time-varying component; Circuit simulation; Electromagnetic heating; Gallium arsenide; Microwave FETs; Microwave frequencies; Power dissipation; Predictive models; Radio frequency; Temperature dependence; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference Proceedings, 1997. APMC '97, 1997 Asia-Pacific
Print_ISBN :
962-442-117-X
Type :
conf
DOI :
10.1109/APMC.1997.654642
Filename :
654642
Link To Document :
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