Title :
High-fmax AlGaAs/InGaAs HBTs and their application in millimeter-wave ranges
Author :
Honjo, Kazuhiko ; Shimawaki, Hidenori ; Tanaka, Shinichi ; Suzuki, Yasuyuki
Author_Institution :
NEC Corp., Ibaraki, Japan
Abstract :
AlGaAs/InGaAs HBTs with selectively-regrown extrinsic base regions have been developed. This HBT structure successfully decreases base resistances by 1/4, compared to the conventional HBT structures. Maximum oscillation frequency of the HBT is 280 GHz. The newly developed HBTs have opened up applications in millimeter wave ranges. A 26 GHz 3.6 W power amplifier and a DC-60 GHz ultra broad band amplifier were developed by using this new technology
Keywords :
aluminium compounds; bipolar MIMIC; gallium arsenide; heterojunction bipolar transistors; indium compounds; integrated circuit technology; millimetre wave bipolar transistors; millimetre wave power amplifiers; millimetre wave power transistors; power bipolar transistors; wideband amplifiers; 208 GHz; 26 GHz; 60 GHz; AlGaAs-InGaAs; AlGaAs/InGaAs HBTs; EHF; base resistance; millimeter-wave ranges; power amplifier; selectively-regrown extrinsic base regions; ultra broad band amplifier; Conductivity; Contact resistance; Cutoff frequency; Doping; Fingers; Frequency measurement; Gain; Heterojunction bipolar transistors; Indium gallium arsenide; Ohmic contacts;
Conference_Titel :
Microwave Conference Proceedings, 1997. APMC '97, 1997 Asia-Pacific
Print_ISBN :
962-442-117-X
DOI :
10.1109/APMC.1997.654646
