Title :
A folded-switching mixer in SOI CMOS technology
Author :
Iji, Ayobami ; Zhu, Xi ; Heimlich, Michael
Author_Institution :
Dept. of Electron., Macquarie Univ., Sydney, NSW, Australia
Abstract :
A wideband 3.5 to 5.5GHz low voltage folded-switching mixer is implemented in 0.25um SOI CMOS technology. The post-layout simulation of the designed mixer at 4.5GHz has noise figure (NF) of 9.6dB, input IP3 of -9dBm, conversion gain (CG) of 10.9dB and total current consumption including bias is 4.5mA under 1.5V supply voltage. The designed mixer can also operate under 1V supply voltage with relatively small linear performances degradation. The chip area is 0.55×0.5mm2. Due to high-resistivity silicon substrate, buried oxide isolation and low threshold voltage, SOI CMOS technology offers significant performance improvements for mixers, which makes the designed mixer well suitable for low voltage and low power applications.
Keywords :
CMOS integrated circuits; low-power electronics; microwave mixers; silicon-on-insulator; SOI CMOS technology; buried oxide isolation; conversion gain; current 4.5 mA; current consumption; designed mixer; frequency 3.5 GHz to 5.5 GHz; gain 10.9 dB; high-resistivity silicon substrate; linear performances degradation; low power application; low threshold voltage; low voltage application; noise figure; noise figure 9.6 dB; post-layout simulation; size 0.25 mum; supply voltage; voltage 1.5 V; wideband low voltage folded-switching mixer; CMOS integrated circuits; Inductors; Low voltage; Mixers; Radio frequency; Transconductance; Transistors;
Conference_Titel :
Circuits and Systems (MWSCAS), 2012 IEEE 55th International Midwest Symposium on
Conference_Location :
Boise, ID
Print_ISBN :
978-1-4673-2526-4
Electronic_ISBN :
1548-3746
DOI :
10.1109/MWSCAS.2012.6292056
