A low-cost and highly design flexible millimeter-wave flip-chip IC for prospective commercial applications

Author

Sakai, Hiroyuki ; Yoshida, Takayuki ; Takahashi, Kazuaki

Author_Institution

Electron. Res. Lab., Matsushita Electron. Corp., Osaka, Japan

fYear

1997

fDate

2-5 Dec 1997

Firstpage

741

Abstract

A new MM-wave IC concept consisting of flip-chip bonded MM-wave transistors on microstrip lines formed on a Si substrate and its key technologies are introduced. By using benzocyclobutene (BCB) dielectric, the insertion loss of microstrip lines has been reduced to less than 1/3 as compared with that of the conventional SiO₂ based one, and the influence of the bonding pad has also been decreased. A 50 GHz HBT amplifier and a 30 GHz HFET/HBT receiver front-end IC are demonstrated as examples of MFIC applications. Results show that MFICs using BCB dielectric and micro bump bonding (MBB) technology have performance and designability suitable for the MM-wave band

Keywords

flip-chip devices; hybrid integrated circuits; integrated circuit design; integrated circuit technology; microassembling; microstrip circuits; millimetre wave amplifiers; millimetre wave integrated circuits; millimetre wave receivers; 30 GHz; 50 GHz; BCB dielectric; EHF; HBT amplifier; HFET/HBT receiver front-end IC; MM-wave IC; Si; Si substrate; benzocyclobutene dielectric; commercial applications; flip-chip bonded MM-wave transistors; insertion loss reduction; micro bump bonding; microstrip lines; millimeter-wave flip-chip IC; Bonding; Dielectric losses; Dielectric substrates; HEMTs; Heterojunction bipolar transistors; Insertion loss; Microstrip; Millimeter wave technology; Millimeter wave transistors; Submillimeter wave integrated circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference Proceedings, 1997. APMC '97, 1997 Asia-Pacific

Print_ISBN

962-442-117-X

Type

conf

DOI

10.1109/APMC.1997.654648

Filename

654648