Author :
Meier, J. ; Kroll, U. ; Spitznagel, J. ; Benagli, S. ; Androutsopoulos, G. ; Monteduro, G. ; Borello, D. ; Hugli, A. ; Roschek, T. ; Zimin, D. ; Stein, W. ; Springer, J. ; Kluth, O. ; Ellert, Ch ; Zindel, A. ; Buchel, G. ; Buchel, A. ; Koch, D. ; Feitknec
Abstract :
Amorphous silicon p-i-n solar cells and modules have been developed in small R& D KAI reactors. Test cells of 0.25 mum thick i-layer exceed 10 % initial efficiencies and stabilized ones of 8.2 %. The a-Si:H deposition process is successfully transferred to industrial size substrates of 1.4 m2 area resulting in initial module powers of 106.4 W using a commercial TCO front AFG and, recently, 104.1 W using in-house developed LPCVD front ZnO. For both modules our in-house LPCVD ZnO has been applied as back contact. The former large-area module passed successfully the damp-heat test. Entirely microcrystalline p-i-n cells with an efficiency of 8.5 % could be prepared in a single-chamber KAI-S reactor. Micromorph tandems resulted in initial cell efficiencies of 10.7 %, whereas mini-modules lead to initial aperture efficiencies of 10.2 %
Keywords :
amorphous semiconductors; elemental semiconductors; plasma CVD; plasma materials processing; semiconductor device manufacture; semiconductor junctions; semiconductor thin films; silicon; solar cells; thin film devices; 0.25 micron; 10.2 percent; 10.7 percent; 8.2 percent; AFG; KAI systems; LPCVD; Si; TCO; amorphous silicon p-i-n solar cells; damp-heat test; deposition process; industrial PECVD; microcrystalline p-i-n cells; micromorph tandems; thin film silicon solar cells; Amorphous silicon; Costs; Crystallization; Inductors; Photovoltaic cells; Production equipment; Semiconductor thin films; Substrates; Transistors; Zinc oxide;
