In Situ Defect Spectroscopy: Probing Dangling Bonds During a-Si: H Film Growth by Subgap Absorption

Author

Kessels, W.M.M. ; Aarts, I.M.P. ; Pipino, A.C.R. ; van de Sanden, Mauritius C. M.

Author_Institution

Dept. of Appl. Phys., Eindhoven Univ. of Technol.

Volume

2

fYear

2006

fDate

38838

Firstpage

1728

Lastpage

1731

Abstract

This paper describes a novel optical diagnostic that was recently introduced to the field of Si-based thin films for probing defect states such as dangling bonds in a-Si:H. This diagnostic is based on the cavity ringdown spectroscopy (CRDS) technique. When applied in situ or real time during film growth it can provide new insights into the a-Si:H film properties as well as into the fundamental surface processes during growth. In this paper the CRDS technique is described and both the ex situ application on as-deposited a-Si:H films as well as the in situ application during a-Si:H film growth are presented

Keywords

dangling bonds; defect absorption spectra; defect states; elemental semiconductors; hydrogen; semiconductor thin films; silicon; CRDS; Si:H; cavity ringdown spectroscopy; dangling bonds; defect spectroscopy; defect states; fundamental surface process; optical diagnostics; subgap absorption; thin film growth; Absorption; Density measurement; NIST; Optical films; Optical harmonic generation; Physics; Rough surfaces; Spectroscopy; Surface roughness; Thin film devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Energy Conversion, Conference Record of the 2006 IEEE 4th World Conference on

Conference_Location

Waikoloa, HI

Print_ISBN

1-4244-0017-1

Electronic_ISBN

1-4244-0017-1

Type

conf

DOI

10.1109/WCPEC.2006.279825

Filename

4059991