DocumentCode
320542
Title
FDTD simulation of quasi-optical device grids
Author
Ren, Jishi ; Wang, Xudong ; Hwu, R. Jennifer
Author_Institution
Dept. of Electr. Eng., Utah Univ., Salt Lake City, UT, USA
fYear
1997
fDate
2-5 Dec 1997
Firstpage
849
Abstract
A FDTD analysis of grid characteristics of millimeter wave quasi-optical array is presented in this paper. The grid impedance and equivalent circuit parameters are obtained by FDTD simulations through proper treatment of metal grids on the interface between air and the GaAs substrate. Comparisons are made among the FDTD results, analytical solutions, and experimental data. The FDTD algorithm provides more accurate results than analytical solutions and proves to be an excellent tool for analyzing quasi-optical device grids
Keywords
arrays; finite difference time-domain analysis; millimetre wave devices; power combiners; EHF; FDTD simulation; GaAs; GaAs substrate; MM-wave quasi-optical array; equivalent circuit parameters; grid characteristics; grid impedance; metal grids; millimeter wave type; quasi-optical device grids; Dielectric substrates; Diodes; Finite difference methods; Frequency; Impedance; Optical arrays; Phased arrays; Power transmission lines; Reflection; Time domain analysis;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference Proceedings, 1997. APMC '97, 1997 Asia-Pacific
Print_ISBN
962-442-117-X
Type
conf
DOI
10.1109/APMC.1997.654675
Filename
654675
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