Analysis for Radiation-Resistance of InGaP and GaAs Sub-Cells for InGaP/GaAs/Ge 3-Junction Solar Cells

Author

Yamaguchi, Masafumi ; Ekins-Daukes, Nicholas J. ; Lee, Hae-Seok ; Sumita, Taishi ; Imaizumi, Mitsuru ; Takamoto, Tatsuya ; Agui, Takaaki ; Kaneiwa, Minoru ; Kamimura, Kunio ; Ohshima, Takeshi ; Itoh, Hisayoshi

Author_Institution

Toyota Technol. Inst., Nagoya

Volume

2

fYear

2006

fDate

38838

Firstpage

1789

Lastpage

1792

Abstract

The radiation resistance of individual InGaP and GaAs sub-cells is assessed as a function of base doping under low-energy proton irradiation. It is found that InGaP sub-cells with low base doping are the most radiation tolerant. However, in GaAs, carrier removal leads to a rapid degradation in sub-cells with low base doping and the most radiation hard sub-cell is achieved using a linearly graded base doping profile

Keywords

III-V semiconductors; doping profiles; elemental semiconductors; gallium arsenide; gallium compounds; germanium; indium compounds; proton effects; semiconductor doping; solar cells; space power generation; 3-junction solar cells; InGaP-GaAs-Ge; doping profile; low-energy proton irradiation; radiation tolerance; radiation-resistance; Atomic measurements; Coatings; Degradation; Doping profiles; Electrons; Gallium arsenide; Photovoltaic cells; Protons; Research and development; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Energy Conversion, Conference Record of the 2006 IEEE 4th World Conference on

Conference_Location

Waikoloa, HI

Print_ISBN

1-4244-0017-1

Electronic_ISBN

1-4244-0017-1

Type

conf

DOI

10.1109/WCPEC.2006.279838

Filename

4060004