Title :
Capacitance Modelling For Double-sided Si Detectors With Double-metal Readout
Author_Institution :
LEPSI-CRN
fDate :
31 Oct-6 Nov 1993
Keywords :
Capacitance; Circuit noise; Detectors; Electrons; Face detection; Implants; Insulation; Metal-insulator structures; Noise shaping; Silicon;
Conference_Titel :
Nuclear Science Symposium and Medical Imaging Conference, 1993., 1993 IEEE Conference Record.
Print_ISBN :
0-7803-1487-5
DOI :
10.1109/NSSMIC.1993.701648
