Title :
R&D on III-V Compound Solar Cells for Space Application at TIPS
Author :
Chen, Wenjun ; Du, Fusheng ; Sun, Qiang ; Xiao, Zhibin ; Qiao, Zaixiang ; Xu, Jun ; Sun, Yanzheng ; Xu, Shouyan
Author_Institution :
Tianjin Inst. of Power Sources
Abstract :
Driven by the market needs from high capacity telecommunication satellites, Tianjin Institute of Power Sources has made intensive efforts to develop GaAs based III-V compound solar cells in the last decade. A 20 KW/year production line was soon established and solar panels with GaAs/Ge single junction solar cells of excellent performance have been delivered for several telecommunication satellite projects. Meanwhile, successful research work in recent years on GaInP/GaInAs/Ge multijunction solar cells has resulted TIPS´s first generation of triplejunction product with average efficiency above 26.5%
Keywords :
III-V semiconductors; elemental semiconductors; gallium arsenide; gallium compounds; germanium; indium compounds; research and development; semiconductor heterojunctions; solar cells; solar power satellites; space power generation; GaAs-Ge; GaInP-GaInAs-Ge; III-V compound solar cells; R&D; TIPS; Tianjin Institute of Power Source; multijunction solar cells; single junction solar cells; solar panels; space application; telecommunication satellites; triplejunction product; Artificial satellites; Distributed Bragg reflectors; Gallium arsenide; III-V semiconductor materials; Inductors; MOCVD; Photovoltaic cells; Production; Research and development; Space technology;
Conference_Titel :
Photovoltaic Energy Conversion, Conference Record of the 2006 IEEE 4th World Conference on
Conference_Location :
Waikoloa, HI
Print_ISBN :
1-4244-0017-1
Electronic_ISBN :
1-4244-0017-1
DOI :
10.1109/WCPEC.2006.279844
