Minority-Carrier Injection-Enhanced Recovery of Radiation-Induced Defects in n+p AlInGaP Solar Cells

Author

Lee, Hae-Seok ; Yamaguchi, Masafumi ; Ekins-Daukes, Nicholas J. ; Khan, Aurangzeb ; Takamoto, Tatsuya ; Imaizumi, Mitsuru ; Ohshima, Takeshi ; Itoh, Hisayoshi

Author_Institution

Toyota Technol. Inst., Nagoya

Volume

2

fYear

2006

fDate

38838

Firstpage

1826

Lastpage

1829

Abstract

The recovery of defects introduced in n⁺/p AlInGaP solar cells under the 1 MeV electron/30keV proton irradiation by the minority-carrier injection-enhanced annealing is presented here. As a forward bias injection (100 mA/cm²) time increases, DLTS signal of H1 and H2 defects, which are introduced by the 1 MeV electron irradiation, decreases, indicating that they are annealed out due to nonradiative electron-hole recombination enhanced process. The activation energy DeltaE for the recovery of defect centers (H1 and H2) by the injection was 0.50 eV and 0.60 eV, respectively. Under the 30 keV proton irradiation, HP1 and HP2 defect centers were produced, and the annealing activation energy of AlInGaP solar cells obtained from the injection (1 A/cm²) was 0.42 eV

Keywords

III-V semiconductors; aluminium compounds; annealing; charge injection; electron beam effects; electron-hole recombination; gallium compounds; indium compounds; minority carriers; p-n junctions; proton effects; solar cells; 1 MeV; 30 MeV; AlInGaP; DLTS signal; annealing activation energy; defect center recovery; electron-proton irradiation; forward bias injection time; minority-carrier injection-enhanced annealing; minority-carrier injection-enhanced recovery; n⁺-p semiconductor solar cells; nonradiative electron-hole recombination enhanced process; radiation-induced defects; Aerospace electronics; Annealing; Electron mobility; Electron traps; Energy capture; Hydrogen; Photovoltaic cells; Physics; Protons; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Energy Conversion, Conference Record of the 2006 IEEE 4th World Conference on

Conference_Location

Waikoloa, HI

Print_ISBN

1-4244-0017-1

Electronic_ISBN

1-4244-0017-1

Type

conf

DOI

10.1109/WCPEC.2006.279848

Filename

4060014