• DocumentCode
    3205924
  • Title

    Outdoor performance of triple stacked a-Si photovoltaic module in various geographical locations and climates

  • Author

    Fukae, Kimitoshi ; Lim, Chin Chou ; Tamechika, Masanari ; Takehara, Nobuyoshi ; Saito, Keishi ; Kajita, Isamu ; Kondo, Eiichi

  • Author_Institution
    Ecology R/D, Canon Inc., Kyoto, Japan
  • fYear
    1996
  • fDate
    13-17 May 1996
  • Firstpage
    1227
  • Lastpage
    1230
  • Abstract
    A systematic investigation has been made on the power output measurement of a-Si//a-SiGe//a-SiGe triple stacked solar cells. Prototype modules incorporating triple a-Si cells fabricated using a high deposition rate plasma CVD process with a microwave power source have been exposed outdoors for about a half to one year at three different geographical locations to evaluate their outdoor performance under cold, temperate and tropical climates. The results showed that a-Si performed better under higher temperature climates. Energy efficiency over 8% was obtained in Kuala Lumpur. A power rating under 1 Sun, 50 °C light soaking conditions seem to be reasonable in Kyoto
  • Keywords
    Ge-Si alloys; amorphous semiconductors; elemental semiconductors; plasma CVD; plasma CVD coatings; semiconductor device testing; semiconductor growth; semiconductor thin films; silicon; solar cells; 50 C; Si-SiGe-SiGe; a-Si/a-SiGe/a-SiGe triple-stacked solar cells; cold climate; deposition rate; energy efficiency; geographical location; light soaking conditions; outdoor performance; plasma CVD process; power rating; temperate climate; tropical climate; Energy efficiency; Photovoltaic cells; Photovoltaic systems; Plasma measurements; Plasma sources; Plasma temperature; Power measurement; Prototypes; Solar power generation; Sun;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference, 1996., Conference Record of the Twenty Fifth IEEE
  • Conference_Location
    Washington, DC
  • ISSN
    0160-8371
  • Print_ISBN
    0-7803-3166-4
  • Type

    conf

  • DOI
    10.1109/PVSC.1996.564353
  • Filename
    564353