Title :
Linear operation of high-power millimeter-wave stacked-FET PAs in CMOS SOI
Author :
Dabag, Hayg-Taniel ; Asbeck, Peter M. ; Buckwalter, James F.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of California San Diego, La Jolla, CA, USA
Abstract :
Stacked-FET PAs have emerged as a promising circuit technique for high-power CMOS PAs at millimeter-wave bands. Common-source (1-stack) and 3-stack PAs are realized in 45-nm CMOS SOI and compared at 45-GHz. The saturated output power increases from 10 dBm to more than 18 dBm respectively for 1- and 3-stack PAs. Compression and EVM/ACP measurements for QAM modulation are presented to discuss the linearization requirements of millimeter-wave stacked-FET PAs.
Keywords :
field effect transistors; power amplifiers; CMOS SOI; QAM modulation; common source; high power CMOS PA; high power millimeter wave stacked FET PA; linear operation; linearization; millimeter wave band; CMOS integrated circuits; CMOS technology; FETs; Logic gates; Millimeter wave transistors; Power generation;
Conference_Titel :
Circuits and Systems (MWSCAS), 2012 IEEE 55th International Midwest Symposium on
Conference_Location :
Boise, ID
Print_ISBN :
978-1-4673-2526-4
Electronic_ISBN :
1548-3746
DOI :
10.1109/MWSCAS.2012.6292113
