DocumentCode
3206253
Title
Comparison of on-resistance of a power MOSFET by varying temperature
Author
Lu, W. ; Mauriello, R.J. ; Sundaram, K.B. ; Chow, L.C.
Author_Institution
Dept. of Mech., Mater. & Aerosp. Eng., Central Florida Univ., Orlando, FL, USA
fYear
1998
fDate
24-26 Apr 1998
Firstpage
264
Lastpage
267
Abstract
The development of the power MOSFET allows an electronic circuit designer greater flexibility in high power switching applications. This experiment demonstrates that the on-resistance of a power MOSFET decreases significantly when the operating temperature decreases. A comparison of on-resistance is then generated at 77 K, 173 K, 243 K and 295 K to show the effect of cryogenic cooling
Keywords
cryogenic electronics; electric breakdown; electric resistance; field effect transistor switches; power MOSFET; 77 to 295 K; cryogenic cooling; high power switching applications; on-resistance; operating temperature; power MOSFET; Circuit testing; Cryogenics; Electric resistance; Electron mobility; Impedance; MOSFET circuits; Power MOSFET; Power engineering computing; Temperature dependence; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Southeastcon '98. Proceedings. IEEE
Conference_Location
Orlando, FL
Print_ISBN
0-7803-4391-3
Type
conf
DOI
10.1109/SECON.1998.673345
Filename
673345
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