Title :
Comparison of on-resistance of a power MOSFET by varying temperature
Author :
Lu, W. ; Mauriello, R.J. ; Sundaram, K.B. ; Chow, L.C.
Author_Institution :
Dept. of Mech., Mater. & Aerosp. Eng., Central Florida Univ., Orlando, FL, USA
Abstract :
The development of the power MOSFET allows an electronic circuit designer greater flexibility in high power switching applications. This experiment demonstrates that the on-resistance of a power MOSFET decreases significantly when the operating temperature decreases. A comparison of on-resistance is then generated at 77 K, 173 K, 243 K and 295 K to show the effect of cryogenic cooling
Keywords :
cryogenic electronics; electric breakdown; electric resistance; field effect transistor switches; power MOSFET; 77 to 295 K; cryogenic cooling; high power switching applications; on-resistance; operating temperature; power MOSFET; Circuit testing; Cryogenics; Electric resistance; Electron mobility; Impedance; MOSFET circuits; Power MOSFET; Power engineering computing; Temperature dependence; Voltage;
Conference_Titel :
Southeastcon '98. Proceedings. IEEE
Conference_Location :
Orlando, FL
Print_ISBN :
0-7803-4391-3
DOI :
10.1109/SECON.1998.673345
