A process and temperature invariant on-chip resistor and its application

Author

Anvesha, A. ; Dave, Marshnil ; Baghini, Maryam Shojaei ; Sharma, Dinesh

Author_Institution

Dept. of Electr. Eng., Indian Inst. of Technol.(IIT)-Bombay, Mumbai, India

fYear

2012

fDate

5-8 Aug. 2012

Firstpage

706

Lastpage

709

Abstract

This paper presents a novel bias circuit for achieving process and temperature invariant resistor using a MOSFET operating in triode region. The proposed circuit comprises of an enhanced process tracking circuit and complementary to absolute temperature (CTAT) voltage generators. The proposed circuit has been designed and optimized in 180nm mixed-mode CMOS technology. Exhaustive Montecarlo simulations show that the ON resistance of the MOSFET (R_ON) varies only by ± 7.6% with process and ± 1.2% with temperature ranging from 0°C to 100°C. The proposed bias circuit reduces variation in R_ON by a factor of 3.4 as compared to a fixed bias MOSFET. The proposed circuit consumes 130μW power.

Keywords

CMOS integrated circuits; MOSFET; Monte Carlo methods; integrated circuit design; mixed analogue-digital integrated circuits; resistors; triodes; MOSFET; ON resistance; bias circuit; circuit design; complementary to absolute temperature voltage generator; exhaustive Monte Carlo simulation; mixed-mode CMOS technology; power 130 muW; process tracking circuit; size 180 nm; temperature 0 C to 100 C; temperature invariant on-chip resistor; triode region; CMOS integrated circuits; MOSFETs; Resistance; Resistors; System-on-a-chip; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems (MWSCAS), 2012 IEEE 55th International Midwest Symposium on

Conference_Location

Boise, ID

ISSN

1548-3746

Print_ISBN

978-1-4673-2526-4

Electronic_ISBN

1548-3746

Type

conf

DOI

10.1109/MWSCAS.2012.6292118

Filename

6292118