DocumentCode :
3206342
Title :
Analytical model for luminescence enhancement by metal nanoparticles
Author :
Sun, Guofa ; Khurgin, Jacob B.
Author_Institution :
Univ. of Massachusetts, Boston, MA, USA
fYear :
2013
fDate :
13-15 Dec. 2013
Firstpage :
1
Lastpage :
2
Abstract :
We report a simple yet rigorous analytical model that adequately describes the luminescence enhancement of optical emitters that are placed in the vicinity of metal nanoparticles of sub-wavelength dimensions. Using the example of Au nanospheres embedded in the GaN dielectric, we show that enhancement depends strongly on the original radiative efficiency of the emitter, the nanoparticle size, and the separation between the emitter and metal nanosphere. We demonstrate that strong enhancement favors the closely spaced emitters and metal nanospheres, but putting them too close to each other does not always produce additional enhancement. Thus our model provides analytical treatment of the luminescence quenching and can be used to optimize both nanoparticle size and its separation from the emitter to yield maximum enhancement factor.
Keywords :
Green´s function methods; III-V semiconductors; dielectric materials; gallium compounds; gold; nanoparticles; particle size; radiation quenching; wide band gap semiconductors; Au; GaN; Green´s function approach; analytical model; emitter radiative efficiency; luminescence enhancement; luminescence quenching; metal nanoparticles; metal nanospheres; nanoparticle size; optical emitters; subwavelength dimensions; yield maximum enhancement factor; Analytical models; Metals; Nanoparticles; Plasmons; Raman scattering;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave and Photonics (ICMAP), 2013 International Conference on
Conference_Location :
Dhanbad
Print_ISBN :
978-1-4799-2176-8
Type :
conf
DOI :
10.1109/ICMAP.2013.6733452
Filename :
6733452
Link To Document :
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