DocumentCode
3206491
Title
Switching characteristics of a power MOSFET with varying temperature
Author
Lu, W. ; Mauriello, R.J. ; Sundaram, K.B. ; Chow, L.C.
Author_Institution
Dept. of Mech., Mater. & Aerosp. Eng., Central Florida Univ., Orlando, FL, USA
fYear
1998
fDate
24-26 Apr 1998
Firstpage
268
Lastpage
270
Abstract
Over the last several years power MOSFET´s have stimulated some very interesting research, particularly applied to cryogenic conditions. This research was developed to study the effects of the power MOSFET´s ability to turn on and turn off at varying frequencies and compare the results at room temperature and at liquid nitrogen temperature. The present work will demonstrate that by exposing the device to liquid nitrogen temperature, the overall time response is greatly enhanced
Keywords
capacitance; cryogenic electronics; field effect transistor switches; power MOSFET; semiconductor device testing; cryogenic conditions; liquid nitrogen temperature; overall time response; power MOSFET; switching characteristics; varying temperature conditions; Capacitance; Circuit testing; Cooling; Cryogenics; Frequency; MOSFET circuits; Nitrogen; Power MOSFET; Temperature; Time factors;
fLanguage
English
Publisher
ieee
Conference_Titel
Southeastcon '98. Proceedings. IEEE
Conference_Location
Orlando, FL
Print_ISBN
0-7803-4391-3
Type
conf
DOI
10.1109/SECON.1998.673346
Filename
673346
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