Title :
Switching characteristics of a power MOSFET with varying temperature
Author :
Lu, W. ; Mauriello, R.J. ; Sundaram, K.B. ; Chow, L.C.
Author_Institution :
Dept. of Mech., Mater. & Aerosp. Eng., Central Florida Univ., Orlando, FL, USA
Abstract :
Over the last several years power MOSFET´s have stimulated some very interesting research, particularly applied to cryogenic conditions. This research was developed to study the effects of the power MOSFET´s ability to turn on and turn off at varying frequencies and compare the results at room temperature and at liquid nitrogen temperature. The present work will demonstrate that by exposing the device to liquid nitrogen temperature, the overall time response is greatly enhanced
Keywords :
capacitance; cryogenic electronics; field effect transistor switches; power MOSFET; semiconductor device testing; cryogenic conditions; liquid nitrogen temperature; overall time response; power MOSFET; switching characteristics; varying temperature conditions; Capacitance; Circuit testing; Cooling; Cryogenics; Frequency; MOSFET circuits; Nitrogen; Power MOSFET; Temperature; Time factors;
Conference_Titel :
Southeastcon '98. Proceedings. IEEE
Conference_Location :
Orlando, FL
Print_ISBN :
0-7803-4391-3
DOI :
10.1109/SECON.1998.673346
