Title :
A 126.9–132.4GHz wide-locking low-power frequency-quadrupled phase-locked loop in 130nm SiGe BiCMOS
Author :
Lin, Yang ; Kotecki, David E.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Maine, Orono, ME, USA
Abstract :
This paper explores a common-emitter buffer-based frequency multiplier which can be applied to the phase-locked loop (PLL) to boost the overall output frequency and locking range by locking the PLL in a lower fundamental frequency and then multiplying the fundamental frequency to a higher output frequency. An integer PLL with a frequency quadrupler is designed to verify this technique in 130nm SiGe BiCMOS technology. The post-layout simulation shows this D-band (110-170GHz) PLL has a wide locking range from 126.9 to 132.4GHz. The output power into a 50Ω load is -30dBm. The total power consumption is approximately 16.95mW. The PLL phase noise at 1MHz offset frequency is -66dBc/Hz. Its settling time is ~2μs. The microchip area is 850μm×760μm.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; field effect MIMIC; frequency multipliers; low-power electronics; phase locked loops; phase noise; BiCMOS technology; PLL phase noise; SiGe; common emitter buffer based frequency multiplier; field effect MIMIC; frequency 126.9 GHz to 132.4 GHz; locking range; post layout simulation; power 16.95 mW; resistance 50 ohm; size 130 nm; size 760 nm; size 850 nm; wide locking low power frequency quadrupled phase locked loop; CMOS integrated circuits; Frequency conversion; Harmonic analysis; Phase locked loops; Phase noise; Silicon germanium; Voltage-controlled oscillators;
Conference_Titel :
Circuits and Systems (MWSCAS), 2012 IEEE 55th International Midwest Symposium on
Conference_Location :
Boise, ID
Print_ISBN :
978-1-4673-2526-4
Electronic_ISBN :
1548-3746
DOI :
10.1109/MWSCAS.2012.6292130