Title :
High temperature simulation of 6H- and 4H-silicon carbide MOSFETs
Author :
Shams, S.F. ; Sundaram, K.B. ; Chow, L.C.
Author_Institution :
Dept. of Electr. & Comput. Eng., Central Florida Univ., Orlando, FL, USA
Abstract :
Vertical power DMOSFET has been simulated using the device simulator ISE-TCAD. The most recent parameters for 6H and 4H SiC crystals are used for this simulation. Vertical DMOSFET with different channel lengths operating at two different temperatures has been examined
Keywords :
digital simulation; power MOSFET; semiconductor device models; semiconductor materials; silicon compounds; ISE-TCAD device simulator; MOSFETs; SiC; channel lengths; high temperature simulation; vertical power DMOSFET; Aerospace engineering; Aerospace materials; Breakdown voltage; Computational modeling; Crystalline materials; MOSFETs; Poisson equations; Silicon carbide; Temperature; Thermal conductivity;
Conference_Titel :
Southeastcon '98. Proceedings. IEEE
Conference_Location :
Orlando, FL
Print_ISBN :
0-7803-4391-3
DOI :
10.1109/SECON.1998.673347
