DocumentCode :
3207146
Title :
Effects on Moisture on CdTe Cell I-V Characteristics
Author :
Olsen, Larry ; Kundu, Sambhu ; Englehard, Mark
Author_Institution :
Pacific Northwest Nat. Lab., Richland, WA
Volume :
2
fYear :
2006
fDate :
38838
Firstpage :
2138
Lastpage :
2140
Abstract :
This paper focuses on the effect of water on CdTe solar cells provided by Dr. Sampath´s group at Colorado State University, that have not been encapsulated.. Bare cells were subjected to damp heat conditions defined by 60 degC and 90% Relative Humidity (RH). Current voltage characteristics were acquired periodically over a thousand hour period. Bare, unencapsulated CdTe cells appear to exhibit changes in current collection and current loss mechanisms as well as degradation of contact interfaces as a result of damp heat. XPS analyses have been conducted in an effort to identify effects of moisture ingress. The XPS studies indicate that one possible effect of moisture on CdTe cells is to convert the CdO at grain boundaries to Cd(OH)2. Since it is generally assumed that CdO acts as an effective electron reflector on CdTe grain boundaries, formation of the hydroxide could explain the degradation of current voltage characteristics of CdTe cells subjected to damp heat
Keywords :
II-VI semiconductors; X-ray photoelectron spectra; cadmium compounds; grain boundaries; moisture; solar cells; water; 60 C; CdTe; I-V characteristics; XPS; contact interfaces; current voltage characteristics; effective electron reflector; grain boundaries; moisture effect; relative humidity; semiconductor solar cells; water; Contact resistance; Current-voltage characteristics; Degradation; Grain boundaries; Humidity; Laboratories; Moisture; Photovoltaic cells; Stress; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Energy Conversion, Conference Record of the 2006 IEEE 4th World Conference on
Conference_Location :
Waikoloa, HI
Print_ISBN :
1-4244-0017-1
Electronic_ISBN :
1-4244-0017-1
Type :
conf
DOI :
10.1109/WCPEC.2006.279927
Filename :
4060093
Link To Document :
بازگشت