Title :
Ultra low noise microwave oscillators with low residual flicker noise
Author :
Everard, J.K.A. ; Page-Jones, M.
Author_Institution :
Dept. of Electron., York Univ., UK
Abstract :
This paper describes the design of two low noise microwave oscillators operating at 7.6 GHz. These oscillators use room temperature sapphire resonators operating in the TE/sub 01//spl delta/ mode which demonstrate unloaded Q´s of 44,000. Silicon transposed gain amplifiers are used to produce low flicker noise corners of 1 to 2 kHz and a phase noise of -131 dBc at 10 kHz offset. Further improvements of 30 dB are expected using this technique.<>
Keywords :
circuit noise; flicker noise; microwave oscillators; phase noise; resonators; sapphire; 7.6 GHz; SHF; Si; Si transposed gain amplifiers; TE/sub 01//spl delta/ mode operation; microwave oscillators; phase noise; residual flicker noise; room temperature sapphire resonators; ultra low noise oscillators; 1f noise; Acoustical engineering; Frequency; Gallium arsenide; Local oscillators; Low-frequency noise; Low-noise amplifiers; Microwave oscillators; Phase noise; Silicon;
Conference_Titel :
Microwave Symposium Digest, 1995., IEEE MTT-S International
Conference_Location :
Orlando, FL, USA
Print_ISBN :
0-7803-2581-8
DOI :
10.1109/MWSYM.1995.406013
