A comparison of low frequency noise in GaAs and InP-based HBTs and VCOs

Author

Cowles, J. ; Liem Tran ; Block, T. ; Streit, Dwight ; Grossman, C. ; Chao, Greg ; Oki, Aaron

Author_Institution

Electron. & Technol. Div., TRW Inc., Redondo Beach, CA, USA

fYear

1995

fDate

16-20 May 1995

Firstpage

689

Abstract

The low frequency collector noise spectra for GaAs-based and InP-based HBTs have been measured and compared as a function of emitter material, bias and temperature. Al/sub 20/Ga/sub 80/As/GaAs and InAlAs/InGaAs HBTs exhibited classic 1/f noise spectra while the Al/sub 30/Ga/sub 70/As/GaAs HBTs showed a pronounced burst noise component. Identical VCO circuit topologies implemented in Al/sub 20/Ga/sub 80/As/GaAs and InAlAs/lnGaAs HBTs demonstrated a 10 dB improvement in phase noise at a 1 MHz offset over the Al/sub 30/Ga/sub 70/As/GaAs HBT-based VCO.<>

Keywords

1/f noise; III-V semiconductors; aluminium compounds; burst noise; circuit noise; gallium arsenide; heterojunction bipolar transistors; indium compounds; microwave bipolar transistors; microwave oscillators; phase noise; semiconductor device noise; voltage-controlled oscillators; 1 MHz offset; 1/f noise spectra; 20 GHz; 300 Hz to 1 MHz; Al/sub 20/Ga/sub 80/As-GaAs; Al/sub 20/Ga/sub 80/As/GaAs HBTs; HBT-based VCOs; InAlAs-InGaAs; InAlAs/InGaAs HBTs; VCO circuit topologies; bias dependence; burst noise component; emitter material; low frequency collector noise spectra; phase noise; temperature dependence; Circuit noise; Circuit topology; Frequency measurement; Gallium arsenide; Indium compounds; Indium gallium arsenide; Low-frequency noise; Noise measurement; Temperature; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1995., IEEE MTT-S International

Conference_Location

Orlando, FL, USA

ISSN

0149-645X

Print_ISBN

0-7803-2581-8

Type

conf

DOI

10.1109/MWSYM.1995.406014

Filename

406014