Title :
A high power and high efficiency amplifier with controlled second-harmonic source impedance
Author :
Maeda, Munenori ; Takehara, Hironari ; Nakamura, Mitsutoshi ; Ota, Yoshiharu ; Ishikawa, O.
Author_Institution :
Semicond. Res. Center, Matsushita Electr. Ind. Co. Ltd., Osaka, Japan
Abstract :
A novel technology that drastically improves output power and efficiency of amplifiers has been developed. A record high 74% power added efficiency (PAE) with an output power (Pout) of 31.4 dBm (1.4 W) has been achieved from an ion implanted GaAs MESFET at a low supply voltage of 3.5 V and 930 MHz, by optimally terminating second-harmonic source impedance as well as second-harmonic load impedance. By using this technology, a small sized (0.4 cc) power amplifier module for cellular phones has been developed. It has realized a high PAE of 66% with Pout of 31 dBm (1.25 W) under the condition of 3.5 V around 915-945 MHz band.<>
Keywords :
III-V semiconductors; MESFET circuits; UHF power amplifiers; cellular radio; gallium arsenide; impedance matching; modules; power amplifiers; 1.25 W; 1.4 W; 3.5 V; 66 percent; 74 percent; 915 to 945 MHz; 930 MHz; GaAs:Si; UHF operation; cellular phones; controlled second-harmonic source impedance; high efficiency amplifier; high power amplifier; ion implanted GaAs MESFET; power amplifier module; Circuits; FETs; Gallium arsenide; High power amplifiers; Impedance; Low voltage; MESFETs; Power amplifiers; Power generation; Power measurement;
Conference_Titel :
Microwave Symposium Digest, 1995., IEEE MTT-S International
Conference_Location :
Orlando, FL, USA
Print_ISBN :
0-7803-2581-8
DOI :
10.1109/MWSYM.1995.406020
