Title :
A high power density and high efficiency UHF-band HFET for low voltage operation
Author :
Kunii, T. ; Kohno, Yusuke ; Kitano, Toshihiko ; Miyakuni, S. ; Udomoto, J. ; Yamamoto, Koji ; Maemura, K. ; Takano, Hirotaka ; Ishihara, O. ; Tsubouchi, N.
Author_Institution :
Optoelectron. & Microwave Devices R&D Lab., Mitsubishi Electr. Corp., Hyogo, Japan
Abstract :
A high power density and high efficiency AlGaAs-GaAs Heterostructure FET (HFET) for 0.9 GHz digital cellular phone systems has been successfully developed. The device has delivered a high power density of 117 mW/mm with a power-added efficiency (PAE) of 37.6% with a low adjacent channel power (ACP) of -53.4 dBc at a low drain bias of 3.3 V at 950 MHz operating frequency.<>
Keywords :
III-V semiconductors; UHF field effect transistors; aluminium compounds; cellular radio; gallium arsenide; power field effect transistors; 3.3 V; 37.6 percent; 900 to 950 MHz; AlGaAs-GaAs; UHF-band HFET; digital cellular phone systems; heterostructure FET; high efficiency; high power density; low drain bias; low voltage operation; Cellular phones; Fabrication; Frequency; Gallium arsenide; HEMTs; Low voltage; MESFETs; MODFETs; Positron emission tomography; Power amplifiers;
Conference_Titel :
Microwave Symposium Digest, 1995., IEEE MTT-S International
Conference_Location :
Orlando, FL, USA
Print_ISBN :
0-7803-2581-8
DOI :
10.1109/MWSYM.1995.406021
